Samsung Develops Industry-First 36GB HBM3E 12H DRAM

Samsung today has introduced the industry’s first 12-stack HBM3E DRAM, the HBM3E 12H, boasting an unprecedented bandwidth of up to 1,280GB/s and a record-breaking capacity of 36GB. This marks a significant improvement over the previous 8-stack HBM3 8H, with both bandwidth and capacity increasing by more than 50%.

The HBM3E 12H utilizes advanced thermal compression non-conductive film (TC NCF), allowing for a height specification similar to that of 8-layer products, meeting current HBM package requirements. Samsung has reduced the thickness of its NCF material, achieving the industry’s smallest gap between chips at seven micrometers (µm), and eliminating voids between layers. These advancements result in a vertical density increase of over 20% compared to the HBM3 8H product.

With AI applications growing rapidly, the HBM3E 12H is positioned as an ideal solution for future systems requiring greater memory. In AI applications, adopting the HBM3E 12H over the HBM3 8H can increase AI training speeds by 34% on average, and expand the number of simultaneous users of inference services by more than 11.5 times. Samsung has begun sampling the HBM3E 12H to customers, with mass production scheduled for the first half of this year.